InAs/AlSb quantum-cascade light-emitting devices in the 3-5 μm wavelength region

被引：41

作者：

Becker, C ^{[1
]}

Prevot, I ^{[1
]}

Marcadet, X ^{[1
]}

Vinter, B ^{[1
]}

Sirtori, C ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.1348316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Midinfrared (3.7-5.3 mum) electroluminescent devices based on a quantum-cascade (QC) design have been demonstrated using InAs/AlSb heterostructures, grown on GaSb substrates. The very high conduction band discontinuity (>2 eV) of this material system allows the design of QC devices at very short wavelengths. Well-resolved luminescence peaks were observed up to 300 K, with a full-width-at-half-maximum to peak wavelength ratio (Delta lambda/lambda) of the order of 8%. The emission wavelengths are in good agreement with the results of our model. The emitted optical power is lower than that predicted, due to a nonoptimized electron injection into the active region. (C) 2001 American Institute of Physics.

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页码：1029 / 1031

页数：3

相关论文

共 19 条

[1]

Bastard G., 1988, WAVE MECH APPL SEMIC

[2] AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity [J].

Becker, C ;

Sirtori, C ;

Page, H ;

Glastre, G ;

Ortiz, V ;

Marcadet, X ;

Stellmacher, M ;

Nagle, J .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :463-465

[3] Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K [J].

Bewley, WW ;

Lee, H ;

Vurgaftman, I ;

Menna, RJ ;

Felix, CL ;

Martinelli, RU ;

Stokes, DW ;

Garbuzov, DZ ;

Meyer, JR ;

Maiorov, M ;

Connolly, JC ;

Sugg, AR ;

Olsen, GH .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :256-258

[4] Low-threshold interband cascade lasers with power efficiency exceeding 9% [J].

Bruno, JD ;

Bradshaw, JL ;

Yang, RQ ;

Pham, JT ;

Wortman, DE .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3167-3169

[5] COUPLED-QUANTUM-WELL SEMICONDUCTORS WITH GIANT ELECTRIC-FIELD TUNABLE NONLINEAR-OPTICAL PROPERTIES IN THE INFRARED [J].

CAPASSO, F ;

SIRTORI, C ;

CHO, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (05) :1313-1326

[6] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].

Faist, J ;

Capasso, F ;

Sivco, DL ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682

[7]

Faist J., 2000, SEMICONDUCTORS SEMIM, V66

[8] 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers [J].

Garbuzov, DZ ;

Lee, H ;

Khalfin, V ;

Martinelli, R ;

Connolly, JC ;

Belenky, GL .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (07) :794-796

[9] ENERGY-DEPENDENT CYCLOTRON MASS IN INAS/ALSB QUANTUM-WELLS [J].

GAUER, C ;

SCRIBA, J ;

WIXFORTH, A ;

KOTTHAUS, JP ;

BOLOGNESI, CR ;

NGUYEN, C ;

BRAR, B ;

KROEMER, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) :1580-1583

[10] Intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures [J].

Ohtani, K ;

Ohno, H .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1409-1411