Size control and midinfrared emission of epitaxial PbTe/CdTe quantum dot precipitates grown by molecular beam epitaxy

被引:40
作者
Groiss, H. [1 ]
Kaufmann, E.
Springholz, G.
Schwarzl, T.
Hesser, G.
Schaeffler, F.
Heiss, W.
Koike, K.
Itakura, T.
Hotei, T.
Yano, M.
Wojtowicz, T.
机构
[1] Johannes Kepler Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Austria
[2] Osaka Inst Technol, Asahi Ku, Osaka 5358585, Japan
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
基金
奥地利科学基金会;
关键词
D O I
10.1063/1.2817951
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial quantum dots with symmetric and highly facetted shapes are fabricated by thermal annealing of two-dimensional (2D) PbTe epilayers embedded in a CdTe matrix. By varying the thickness of the initial 2D layers, the dot size can be effectively controlled between 5 and 25 nm, and areal densities as high as 3x10(11) cm(-2) can be achieved. The size control allows the tuning of the quantum dot luminescence over a wide spectral range between 2.2 and 3.7 mu m. As a result, ultrabroadband emission from a multilayered quantum dot stack is demonstrated, which is a precondition for the development of superluminescent diodes operating in the near infrared and midinfrared. (C) 2007 American Institute of Physics.
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页数:3
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