High mobility 2D electron gas in iodine modulation doped CdTe/CdMgTe heterostructures

被引：74

作者：

Karczewski, G ^{[1
]}

Jaroszynski, J ^{[1
]}

Barcz, A ^{[1
]}

Kutrowski, M ^{[1
]}

Wojtowicz, T ^{[1
]}

Kossut, J ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

molecular beam epitaxy; modulation doping; quantum Hall effect;

D O I：

10.1016/S0022-0248(98)80169-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on growth and characterization of modulation doped CdTe/Cd1-yMgyTe quantum well structures. Well resolved Shubnikov-de Haas oscillations and quantum Hall effect have been observed. In the best CdTe/Cd1-yMgyTe structures the modulation doping enabled fabrication of a two-dimensional electron gas with mobility exceeding 10(5) cm(2)/V s. This is the highest mobility reported in wide-gap II-VI materials. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：814 / 817

页数：4

共 9 条

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