Photodetecting properties of ZnO-based thin-film transistors

被引:173
作者
Bae, HS [1 ]
Yoon, MH [1 ]
Kim, JH [1 ]
Im, S [1 ]
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
关键词
D O I
10.1063/1.1633676
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the photodetecting properties of a ZnO-based thin-film transistor (TFT) that has been fabricated on a SiO2/p-Si substrate by rf magnetron sputtering at room temperature. Our ZnO-based TFT exhibited a saturation current level of about 6.5 muA under a gate bias of 40 V, decent electron mobility of 0.1 cm(2)/V s, and on/off current ratio of similar to10(6) in the dark. Illuminated by ultraviolet (lambda=340 nm), blue (lambda=450 nm), and green (lambda=540 nm) light with intensity of 0.7 mW/cm(2), our TFT displays high photocurrent gain of 50, 32, and 15 muA, respectively, under a gate bias of 40 V. In the channel depletion state with gate bias of -30 V, the photodetecting sensitivity becomes much higher than in the accumulation state. It is thus concluded that our ZnO-based TFT can be a good UV photodetecting device as well as an electronic device. (C) 2003 American Institute of Physics.
引用
收藏
页码:5313 / 5315
页数:3
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