1.55 μm emission from InAs quantum dots grown on GaAs -: art. no. 151903

被引：22

作者：

Hsieh, TP ^{[1
]}

Chiu, PC

Chyi, JI

Yeh, NT

Ho, WJ

Chang, WH

Hsu, TM

机构：

[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32054, Taiwan

[2] Natl Cent Univ, Ctr Opt Sci, Jhongli 32054, Taiwan

[3] Chunghwa Telelcom Co Ltd, Telecommun Labs, Yangmei 326, Taiwan

[4] Natl Cent Univ, Dept Phys, Jhongli 32054, Taiwan

[5] Natl Cent Univ, Ctr Nano Sci & Technol, Jhongli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 15期

关键词：

D O I：

10.1063/1.2099536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 mu m photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49 mu m when an In0.25Ga0.75As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55 mu m with a linewidth of 28 meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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