InAs/GaAs quantum dots optically active at 1.5 μm

被引：45

作者：

da Silva, MJ ^{[1
]}

Quivy, AA ^{[1
]}

Martini, S ^{[1
]}

Lamas, TE ^{[1
]}

da Silva, ECF ^{[1
]}

Leite, JR ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, Lab Novos Mat Semicond, BR-05315970 Sao Paulo, Brazil

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 16期

关键词：

D O I：

10.1063/1.1569053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum dots grown by molecular-beam epitaxy on GaAs substrates are demonstrated to be suitable structures to achieve an optical emission in the 1.3-1.5-mum range. Their tuning towards such long wavelengths was made possible by combining an extreme reduction of the InAs growth rate and a fast growth of the GaAs cap layer at low temperature. Our results create perspectives for the fabrication of GaAs-based devices operating in the most important telecommunications window. (C) 2003 American Institute of Physics.

引用

页码：2646 / 2648

页数：3

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