Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

被引：34

作者：

Martini, S ^{[1
]}

Quivy, AA ^{[1
]}

da Silva, ECF ^{[1
]}

Leite, JR ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, Lab Novos Mat Semicond, BR-05315970 Sao Paulo, Brazil

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1063/1.1513182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface segregation of indium (In) atoms was investigated during the growth of InGaAs layers by reflection high-energy electron diffraction (RHEED). We observed that the decay constant of the RHEED-oscillation amplitude during growth depends on the growth conditions and is related, in a very simple way, to the segregation coefficient of the In atoms in the InGaAs layers. (C) 2002 American Institute of Physics.

引用

页码：2863 / 2865

页数：3

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