Growth oscillation decay rates for control of III-V molecular beam epitaxy near stoichiometry

被引：19

作者：

Owen, JHG ^{[1
]}

Barvosa-Carter, W ^{[1
]}

Zinck, JJ ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 21期

关键词：

D O I：

10.1063/1.126582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the decay of reflection high-energy electron diffraction oscillations during growth of InAs (001), as a function of growth parameters, such as the V/III ratio. We have shown that the decay constants are sensitive to changes in growth morphology, as measured by scanning tunneling microscopy. Our experiments show that the values of these decay constants decrease at high V/III ratios, in agreement with previous work. Additionally, we have found that the values of the decay constants diverge as the transition between the (2x4) and (4x2) reconstructions is approached. We propose that the decay constants of the growth oscillations may be used as inputs for control of interface morphology. (C) 2000 American Institute of Physics. [S0003-6951(00)03321-0].

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页码：3070 / 3072

页数：3

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