Interface roughness and polar optical phonon scattering in In0.53Ga0.47As/AlAs/InAs RTDs

被引：11

作者：

Lake, R ^{[1
]}

Klimeck, G ^{[1
]}

Blanks, D ^{[1
]}

机构：

[1] Raytheon TI Syst, Appl Res Lab, Dallas, TX 75265 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 8A期

关键词：

D O I：

10.1088/0268-1242/13/8A/046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The contributions of interface roughness scattering and polar optical phonon scattering to the valley current of In0.53Ga0.47As/AlAs/InAs resonant tunnelling diodes (RTDs) are theoretically found to be comparable. An In0.53Ga0.47As/AlAs/InAS RTD design is suggested to experimentally observe the phonon peak which has never been observed in this material system. Such a device will provide a calibration point for the theoretical calculations.

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收藏

页码：A163 / A164

页数：2

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