PHONON-ASSISTED TUNNELING FROM A 2-DIMENSIONAL EMITTER STATE

被引:15
作者
TURLEY, PJ
TEITSWORTH, SW
机构
[1] Department of Physics, Box 90305, Duke University, Durham
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 12期
关键词
D O I
10.1103/PhysRevB.50.8423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a theory of phonon-assisted tunneling in GaAs/AlAs double-barrier structures, which. treats the electrons in the emitter as a two-dimensional electron gas. A complete set of confined and interface optical-phonon modes is calculated using a dielectric-continuum model, and we derive a general expression for the electron-phonon Hamiltonian valid for all optical-phonon modes in an arbitrary heterostructure. The electronic wave functions relevant to phonon-assisted tunneling are found by self-consistently solving the Schrodinger and Poisson equations in both the well and the emitter. Five different phonon modes are predicted to dominate the phonon-assisted tunneling current: three LO-like interface modes, the half-space modes in the emitter, and the confined modes in the well.
引用
收藏
页码:8423 / 8432
页数:10
相关论文
共 46 条
[1]   A-PERPENDICULAR-TO.P VERSUS PHI FOR COUPLING ELECTRONS TO INTERFACE OPTICAL PHONONS IN QUANTUM-WELLS [J].
BABIKER, M ;
CONSTANTINOU, NC ;
RIDLEY, BK .
PHYSICAL REVIEW B, 1993, 48 (04) :2236-2243
[2]   MAGNETOTRANSPORT STUDIES OF CHARGE ACCUMULATION IN AN ALLNAS/GALNAS TUNNELING STRUCTURE [J].
BENAMOR, S ;
MARTIN, KP ;
RASCOL, JJL ;
HIGGINS, RJ ;
POTTER, RC ;
LAKHANI, AA ;
HIER, H .
APPLIED PHYSICS LETTERS, 1989, 54 (19) :1908-1910
[3]   DIRECT OBSERVATION OF 2-DIMENSIONAL MAGNETOPOLARONS IN A RESONANT TUNNEL JUNCTION [J].
BOEBINGER, GS ;
LEVI, AFJ ;
SCHMITTRINK, S ;
PASSNER, A ;
PFEIFFER, LN ;
WEST, KW .
PHYSICAL REVIEW LETTERS, 1990, 65 (02) :235-238
[4]  
Born M., 1954, DYNAMICAL THEORY CRY
[5]   ALAS AND INAS MODE LO PHONON EMISSION ASSISTED TUNNELING IN (INGA)AS/(ALIN)AS DOUBLE BARRIER STRUCTURES [J].
CELESTE, A ;
CURY, LA ;
PORTAL, JC ;
ALLOVON, M ;
MAUDE, DK ;
EAVES, L ;
DAVIES, M ;
HEATH, M ;
MALDONADO, M .
SOLID-STATE ELECTRONICS, 1989, 32 (12) :1191-1195
[6]   THE IV CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING DIODES - OBSERVATION AND CALCULATION ON THEIR TEMPERATURE-DEPENDENCE AND ASYMMETRY [J].
CHEN, J ;
CHEN, JG ;
YANG, CH ;
WILSON, RA .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :3131-3136
[7]   OBSERVATION OF 2-DIMENSIONAL RESONANT MAGNETOPOLARONS AND PHONON-ASSISTED RESONANT TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J].
CHEN, JG ;
YANG, CH ;
YANG, MJ ;
WILSON, RA .
PHYSICAL REVIEW B, 1991, 43 (05) :4531-4533
[8]   EFFECT OF SI DOPING IN ALAS BARRIER LAYERS OF ALAS-GAAS-ALAS DOUBLE-BARRIER RESONANT TUNNELING DIODES [J].
CHENG, P ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1989, 55 (06) :572-574
[9]   SCATTERING-ASSISTED TUNNELING IN DOUBLE-BARRIER DIODES - SCATTERING RATES AND VALLEY CURRENT [J].
CHEVOIR, F ;
VINTER, B .
PHYSICAL REVIEW B, 1993, 47 (12) :7260-7274
[10]   CALCULATION OF PHONON-ASSISTED TUNNELING AND VALLEY CURRENT IN A DOUBLE-BARRIER DIODE [J].
CHEVOIR, F ;
VINTER, B .
APPLIED PHYSICS LETTERS, 1989, 55 (18) :1859-1861