PHONON-ASSISTED TUNNELING FROM A 2-DIMENSIONAL EMITTER STATE

被引:15
作者
TURLEY, PJ
TEITSWORTH, SW
机构
[1] Department of Physics, Box 90305, Duke University, Durham
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 12期
关键词
D O I
10.1103/PhysRevB.50.8423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a theory of phonon-assisted tunneling in GaAs/AlAs double-barrier structures, which. treats the electrons in the emitter as a two-dimensional electron gas. A complete set of confined and interface optical-phonon modes is calculated using a dielectric-continuum model, and we derive a general expression for the electron-phonon Hamiltonian valid for all optical-phonon modes in an arbitrary heterostructure. The electronic wave functions relevant to phonon-assisted tunneling are found by self-consistently solving the Schrodinger and Poisson equations in both the well and the emitter. Five different phonon modes are predicted to dominate the phonon-assisted tunneling current: three LO-like interface modes, the half-space modes in the emitter, and the confined modes in the well.
引用
收藏
页码:8423 / 8432
页数:10
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