MAGNETOTUNNELING MEASUREMENTS OF LOCALIZED OPTICAL PHONONS IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES

被引：6

作者：

TEITSWORTH, SW ^{[1
]}

TURLEY, PJ ^{[1
]}

WALLIS, CR ^{[1
]}

LI, W ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured current-voltage characteristics at liquid-helium temperature and for magnetic fields up to 7 T (parallel to the current flow) for three similar asymmetric GaAs/AlAs double-barrier structures, all of which possess large phonon-assisted tunnelling currents. Confined longitudinal optical (LO) phonons in the GaAs well layer and LO-like symmetric interface phonons treated within a dielectric continuum picture suffice to account for the measured currents. Phonon-assisted tunnelling current levels as well as magnetotunnelling data are found to depend sensitively on well and barrier widths.

引用

页码：508 / 511

页数：4

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