EFFECTS OF ELECTRON INTERFACE-PHONON INTERACTION ON RESONANT TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES

被引：6

作者：

MORI, N

TANIGUCHI, K

HAMAGUCHI, C

机构：

[1] Dept. of Electron. Eng., Osaka Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The tunnelling current through a resonant tunnelling structure is calculated including electron-interface-phonon coupling in the quantum well. The Hamiltonian describing electron-phonon interaction in a double-barrier structure is derived using the dielectric continuum model. Our result shows that interface phonons of the barrier play a significant role in the double-barrier structure whose barrier width is greater than the well width.

引用

页码：B83 / B87

页数：5

共 7 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].