EFFECT OF SI DOPING IN ALAS BARRIER LAYERS OF ALAS-GAAS-ALAS DOUBLE-BARRIER RESONANT TUNNELING DIODES

被引：26

作者：

CHENG, P

HARRIS, JS

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.101836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：572 / 574

页数：3

共 10 条

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[4]

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[5] RESONANT TUNNELING THROUGH A DOUBLE GAAS/ALAS SUPERLATTICE BARRIER, SINGLE QUANTUM-WELL HETEROSTRUCTURE [J].

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[6] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

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PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[7] TUNNELING IN A FINITE SUPERLATTICE [J].

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APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564

[8]

TSUCHIYA M, 1986, APPL PHYS LETT, V49, P88, DOI 10.1063/1.97360

[9] ELASTIC-SCATTERING CENTERS IN RESONANT TUNNELING DIODES [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (03) :201-203

[10]

YANG CH, 1988, 15TH P INT S GAAS RE, P617

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