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Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A

被引：37
作者：
Holmes, DM
Sudijono, JL
McConville, CF
Jones, TS
Joyce, BA
机构：
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2AY,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2AY,ENGLAND
[3] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND
来源：
SURFACE SCIENCE | 1997年 / 370卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
adatoms; adsorption kinetics; chemisorption; epitaxy; gallium arsenide; growth; low index single crystal surfaces; models of surface kinetics; molecular beam epitaxy; RHEED; scanning tunneling microscopy; semiconductor-semiconductor thin film structures; single crystal epitaxy;
D O I：
10.1016/S0039-6028(96)01173-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Scanning tunnelling microscopy (STM) has been used to investigate the morphological basis of the specular beam intensity oscillations observed in reflection high-energy electron diffraction (RHEED) studies during the initial stages of GaAs(111)A homoepitaxy. Analysis of STM images after the deposition of controlled amounts of GaAs up to a coverage of 2 monolayers show a strong relationship between the step density and the RHEED specular beam intensity. It is shown that the RHEED oscillations observed during the initial stages of growth reflect the temporal variation in surface step density.
引用
收藏
页码：L173 / L178
页数：6
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