Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

被引：50

作者：

Martini, S ^{[1
]}

Quivy, AA ^{[1
]}

Tabata, A ^{[1
]}

Leite, JR ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 05期

关键词：

D O I：

10.1063/1.1389336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence experiments were performed as a function of temperature and excitation intensity in order to investigate the optical properties of In0.1Ga0.9As/GaAs quantum wells grown on vicinal GaAs(001) substrates with different miscut angles. The misorientation of the surface played an important role and influenced the intensity, efficiency, energy, and full width at half maximum of the optical emission, as well as the segregation of indium atoms. It is shown that at high temperature the optical properties of InGaAs quantum wells grown on vicinal substrates are slightly inferior to ones of the same structure grown a nominal surface because of the faster escape of the carriers. (C) 2001 American Institute of Physics.

引用

页码：2280 / 2289

页数：10

共 54 条

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].

ANDERSON, NG ;

LAIDIG, WD ;

KOLBAS, RM ;

LO, YC .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367

[2] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754

[3] INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS [J].

ARENT, DJ ;

NILSSON, S ;

GALEUCHET, YD ;

MEIER, HP ;

WALTER, W .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2611-2613

[4] EXCITON DYNAMICS IN INXGA1-XAS/GAAS QUANTUM-WELL HETEROSTRUCTURES - COMPETITION BETWEEN CAPTURE AND THERMAL EMISSION [J].

BACHER, G ;

HARTMANN, C ;

SCHWEIZER, H ;

HELD, T ;

MAHLER, G ;

NICKEL, H .

PHYSICAL REVIEW B, 1993, 47 (15) :9545-9555

[5] INFLUENCE OF BARRIER HEIGHT ON CARRIER DYNAMICS IN STRAINED INXGA1-XAS GAAS QUANTUM-WELLS [J].

BACHER, G ;

SCHWEIZER, H ;

KOVAC, J ;

FORCHEL, A ;

NICKEL, H ;

SCHLAPP, W ;

LOSCH, R .

PHYSICAL REVIEW B, 1991, 43 (11) :9312-9315

[6] SPIN ORIENTATION BY OPTICAL-PUMPING OF STRAINED IN0.35GA0.65AS/GAAS QUANTUM-WELLS GROWN ON VICINAL SUBSTRATES [J].

BACQUET, G ;

HASSEN, F ;

LAURET, N ;

BARRAU, J ;

CESCHIN, AM ;

GRANDJEAN, N ;

MASSIES, J .

SUPERLATTICES AND MICROSTRUCTURES, 1993, 14 (01) :117-122

[7] TEMPERATURE-DEPENDENCE OF OPTICAL-TRANSITIONS BETWEEN ELECTRONIC-ENERGY LEVELS IN SEMICONDUCTORS [J].

BIERNACKI, S ;

SCHERZ, U ;

MEYER, BK .

PHYSICAL REVIEW B, 1994, 49 (07) :4501-4510

[8] THERMALLY ACTIVATED CARRIER ESCAPE MECHANISMS FROM INXGA1-XAS/GAAS QUANTUM-WELLS [J].

BOTHA, JR ;

LEITCH, AWR .

PHYSICAL REVIEW B, 1994, 50 (24) :18147-18152

[9] THE EFFECT OF INP SUBSTRATE MISORIENTATION ON GALNAS-ALLNAS INTERFACE AND ALLOY QUALITY [J].

BROWN, AS ;

MISHRA, UK ;

HENIGE, JA ;

DELANEY, MJ .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3476-3480

[10] EFFECT OF SUBSTRATE TILTING ON MOLECULAR-BEAM EPITAXIAL GROWN ALGAAS/GAAS LASERS HAVING VERY LOW THRESHOLD CURRENT DENSITIES [J].

CHEN, HZ ;

GHAFFARI, A ;

MORKOC, H ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2094-2096

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