INFLUENCE OF BARRIER HEIGHT ON CARRIER DYNAMICS IN STRAINED INXGA1-XAS GAAS QUANTUM-WELLS

被引：125

作者：

BACHER, G ^{[1
]}

SCHWEIZER, H ^{[1
]}

KOVAC, J ^{[1
]}

FORCHEL, A ^{[1
]}

NICKEL, H ^{[1
]}

SCHLAPP, W ^{[1
]}

LOSCH, R ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST TELEKOM,RES INST,W-6100 DARMSTADT,GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.43.9312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strained In(x)Ga(1-x)As/GaAs heterostructures with different In content x, each containing quantum wells with various well widths L(z) (between 2 and 30 nm) are investigated with use of time-integrated and time-resolved spectroscopy. With increasing temperature, a characteristic drop of both the photoluminescence (PL) intensity and PL lifetime is observed, revealing a strong dependence on In content and well width. The temperature dependencies can be explained by thermal emission of the carriers out of rather shallow quantum wells. The transfer of the carriers between quantum wells of different widths across the GaAs barrier is demonstrated and described by a system of rate equations.

引用

页码：9312 / 9315

页数：4

共 8 条

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