ELECTRON-CAPTURE PROCESSES IN OPTICALLY-EXCITED IN0.53GA0.47AS/INP QUANTUM WELLS

被引：14

作者：

CEBULLA, U

BACHER, G

FORCHEL, A

SCHMITZ, D

JURGENSEN, H

RAZEGHI, M

机构：

[1] AIXTRON GMBH,D-5100 AACHEN 1,FED REP GER

[2] THOMSON CSF,F-91401 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.101728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：933 / 935

页数：3

共 12 条

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[9] TRANSIENT CHARACTERISTICS OF PHOTOLUMINESCENCE FROM GAAS/GA0.7AL0.3AS SINGLE QUANTUM WELL STRUCTURE [J].

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