DIRECT AND INDIRECT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS

被引：11

作者：

BRUM, JA

BASTARD, G

机构：

[1] Group de Physique des Solides, l'Ecole Normale Superieure, Paris,, Fr, Group de Physique des Solides l'Ecole Normale Superieure, Paris, Fr

来源：

关键词：

(Brazil) for financial support. This work has baen supported in;

D O I：

10.1016/0749-6036(87)90177-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：51 / 55

页数：5

共 6 条

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[2] RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES
GOBEL, EO
JUNG, H
KUHL, J
PLOOG, K
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (17) : 1588 - 1591
[3] KOZYREV SV, 1985, SOV PHYS SEMICOND+, V19, P1024
[4] MISHIMA T, 1985, IN PRESS SURFACE SCI
[5] MIYOSHI T, 1985, JAP J APPL PHYS, V24, pL35
[6] RESONANT IMPURITY STATES IN QUANTUM-WELL STRUCTURES
PRIESTER, C
ALLAN, G
LANNOO, M
[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3408 - 3411