INXGA1-XAS GAAS PSEUDOMORPHIC QUANTUM-WELLS - GROWTH AND THERMAL-STABILITY

被引：12

作者：

NICKEL, H ^{[1
]}

LOSCH, R ^{[1
]}

SCHLAPP, W ^{[1
]}

LEIER, H ^{[1
]}

FORCHEL, A ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90323-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have optimized the MBE growth conditions of InGaAs/GaAs pseudomorphic structures in order to obtain narrow emission linewidths and high quantum efficiencies. The thermal stability of the strained layers is studied using annealing at T≤930 °C. From the evaluation of the luminescence spectra after 30 min annealing we estimate an In/Ga interdiffusion length of about 2 nm at 900° C. © 1990.

引用

页码：340 / 343

页数：4

共 9 条

[1] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

PHYSICAL REVIEW B, 1988, 37 (08) :4032-4038

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

[3] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

GOETZ, KH ;

BIMBERG, D ;

JURGENSEN, H ;

SELDERS, J ;

SOLOMONOV, AV ;

GLINSKII, GF ;

RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552

[4] TRANSMISSION AND PHOTOREFLECTANCE SPECTRA IN HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM WELLS [J].

JI, G ;

REDDY, UK ;

HUANG, D ;

HENDERSON, TS ;

MORKOC, H .

SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (05) :539-545

[5] OPTICAL-PROPERTIES OF THERMALLY INTERDIFFUSED MBE-GROWN GAAS/GAALAS QUANTUM WELLS [J].

LEIER, H ;

ROTHFRITZ, H ;

FORCHEL, A ;

WEIMANN, G .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :277-280

[6]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[7] INVESTIGATION OF THE CRITICAL LAYER THICKNESS IN ELASTICALLY STRAINED INGAAS/GAALAS QUANTUM WELLS BY PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY [J].

REITHMAIER, JP ;

CERVA, H ;

LOSCH, R .

APPLIED PHYSICS LETTERS, 1989, 54 (01) :48-50

[8] EXCESS STRESS AND THE STABILITY OF STRAINED HETEROSTRUCTURES [J].

TSAO, JY ;

DODSON, BW .

APPLIED PHYSICS LETTERS, 1988, 53 (10) :848-850

[9]

ZIPPERIAN TE, 1988, IEEE GAAS IC S, P251

← 1 →