TRANSMISSION AND PHOTOREFLECTANCE SPECTRA IN HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM WELLS

被引：42

作者：

JI, G

REDDY, UK

HUANG, D

HENDERSON, TS

MORKOC, H

机构：

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1987年 / 3卷 / 05期

关键词：

D O I：

10.1016/0749-6036(87)90238-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：539 / 545

页数：7

共 21 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[3]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[4] A BIRDS-EYE-VIEW ON THE EVOLUTION OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM-WELLS [J].

ESAKI, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1611-1624

[5] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[6] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

GOETZ, KH ;

BIMBERG, D ;

JURGENSEN, H ;

SELDERS, J ;

SOLOMONOV, AV ;

GLINSKII, GF ;

RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552

[7] ENERGY-LEVELS OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES [J].

GREENE, RL ;

BAJAJ, KK ;

PHELPS, DE .

PHYSICAL REVIEW B, 1984, 29 (04) :1807-1812

[8] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

AKSUN, MI ;

PENG, CK ;

MORKOC, H ;

CHAO, PC ;

SMITH, PM ;

DUH, KHG ;

LESTER, LF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651

[9]

JI G, 1987, IN PRESS J APPLI OCT

[10]

JI G, 1987, IN PRESS J VACUUM B

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