OPTICAL-PROPERTIES OF THERMALLY INTERDIFFUSED MBE-GROWN GAAS/GAALAS QUANTUM WELLS

被引：14

作者：

LEIER, H ^{[1
]}

ROTHFRITZ, H ^{[1
]}

FORCHEL, A ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] FERNMELDETECH ZENTRALAMT,D-6100 DARMSTADT,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90401-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：277 / 280

页数：4

共 12 条

[1] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION
CAMRAS, MD
HOLONYAK, N
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STREIFER, W
SCIFRES, DR
PAOLI, TL
LINDSTROM, C
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5637 - 5641
[2] INTERDIFFUSION BETWEEN GAAS AND ALAS
CHANG, LL
KOMA, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 138 - 141
[3] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES
CIBERT, J
PETROFF, PM
WERDER, DJ
PEARTON, SJ
GOSSARD, AC
ENGLISH, JH
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 223 - 225
[4] STRIPE-GEOMETRY QUANTUM-WELL HETEROSTRUCTURE ALXGA1-XAS-GAAS LASERS DEFINED BY DEFECT DIFFUSION
DEPPE, DG
GUIDO, LJ
HOLONYAK, N
HSIEH, KC
BURNHAM, RD
THORNTON, RL
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (09) : 510 - 512
[5] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS
FLEMING, RM
MCWHAN, DB
GOSSARD, AC
WIEGMANN, W
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 357 - 363
[6] ARSENIC PRESSURE-DEPENDENCE OF INTERDIFFUSION OF ALGAAS/GAAS INTERFACE IN QUANTUM-WELL
FURUYA, A
WADA, O
TAKAMORI, A
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L926 - L928
[7] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
GUIDO, LJ
HOLONYAK, N
HSIEH, KC
KALISKI, RW
PLANO, WE
BURNHAM, RD
THORNTON, RL
EPLER, JE
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1372 - 1379
[8] INTERDIFFUSION OF AL AND GA IN (AL,GA)AS/GAAS SUPERLATTICES
LEE, JC
SCHLESINGER, TE
KUECH, TF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1187 - 1190
[9] WAVELENGTH MODIFICATION (DELTA-H-OMEGA = 10-40 MEV) OF ROOM-TEMPERATURE CONTINUOUS QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES BY THERMAL ANNEALING
MEEHAN, K
HOLONYAK, N
BURNHAM, RD
PAOLI, TL
STREIFER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7190 - 7191
[10] KINETICS OF SILICON-INDUCED MIXING OF ALAS-GAAS SUPERLATTICES
MEI, P
YOON, HW
VENKATESAN, T
SCHWARZ, SA
HARBISON, JP
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1823 - 1825

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