KINETICS OF SILICON-INDUCED MIXING OF ALAS-GAAS SUPERLATTICES

被引：101

作者：

MEI, P ^{[1
]}

YOON, HW ^{[1
]}

VENKATESAN, T ^{[1
]}

SCHWARZ, SA ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] BELL COMMUN RES,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 25期

关键词：

D O I：

10.1063/1.97709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1823 / 1825

页数：3

共 18 条

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[3] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

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[5]

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DAPKUS, PD .

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[7]

IIMURA Y, 1986, 18TH C SOL STAT DEV, P623

[8] SILICON DIFFUSION AT POLYCRYSTALLINE-SI/GAAS INTERFACES [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (11) :1208-1210

[9] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L623-L624

[10] SIMS STUDY OF COMPOSITIONAL DISORDERING IN SI ION-IMPLANTED ALGAAS-GAAS SUPERLATTICE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (05) :L385-L387

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