KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES

被引：141

作者：

CIBERT, J ^{[1
]}

PETROFF, PM ^{[1
]}

WERDER, DJ ^{[1
]}

PEARTON, SJ ^{[1
]}

GOSSARD, AC ^{[1
]}

ENGLISH, JH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.97178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：223 / 225

页数：3

共 9 条

[1] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J].

CAMRAS, MD ;

HOLONYAK, N ;

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

PAOLI, TL ;

LINDSTROM, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5637-5641

[2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

COLEMAN, JJ ;

DAPKUS, PD ;

KIRKPATRICK, CG ;

CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[3] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].

FLEMING, RM ;

MCWHAN, DB ;

GOSSARD, AC ;

WIEGMANN, W ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363

[4] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

[5] COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION [J].

HIRAYAMA, Y ;

SUZUKI, Y ;

TARUCHA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07) :L516-L518

[6] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J].

KAWABE, M ;

MATSUURA, N ;

SHIMIZU, N ;

HASEGAWA, F ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L623-L624

[7]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[8] TRANSMISSION ELECTRON-MICROSCOPY OF INTERFACES IN 3-5 COMPOUND SEMICONDUCTORS [J].

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :973-978

[9] HIGH-RESOLUTION STRUCTURAL CHARACTERIZATION OF THE AMORPHOUS-CRYSTALLINE INTERFACE IN SE+-IMPLANTED GAAS [J].

SANDS, T ;

SADANA, DK ;

GRONSKY, R ;

WASHBURN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :874-876

← 1 →