HIGH-RESOLUTION STRUCTURAL CHARACTERIZATION OF THE AMORPHOUS-CRYSTALLINE INTERFACE IN SE+-IMPLANTED GAAS

被引：32

作者：

SANDS, T

SADANA, DK

GRONSKY, R

WASHBURN, J

机构：

来源：

关键词：

D O I：

10.1063/1.94963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：874 / 876

页数：3

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[3]

BRICE DK, 1975, ION IMPLANTATION RAN, V1, P17

[4] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS [J].

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PAINE, BM ;

NICOLET, MA ;

SADANA, DK .

[5] X-RAY ROCKING CURVE STUDY OF SI-IMPLANTED GAAS, SI, AND GE [J].

SPERIOSU, VS ;

PAINE, BM ;

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GLASS, HL .