DAMAGE ANNEALING BEHAVIOR OF SE IMPLANTED GAAS

被引：32

作者：

BHATTACHARYA, RS

RAI, AK

PRONOKO, PP

NARAYAN, J

LING, SC

WILSON, SR

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830

[2] WRIGHT STATE UNIV,DAYTON,OH 45435

[3] MOTOROLA INC,SEMICOND RES & DEV LAB,PHOENIX,AZ 85008

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1983年 / 44卷 / 01期

关键词：

D O I：

10.1016/0022-3697(83)90031-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：61 / 69

页数：9

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