DECHANNELLING OF MEV HE IONS BY TWINNED REGIONS IN IMPLANTED SI CRYSTALS

[1] BEHRISCH R, 1972, RADIAT EFF, V13, P33

[2] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] EISEN FH, 1973, CHANNELING, P415

[5] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &

[6] FOTI G, NUCL INSTRUM METH

[7] SEPARATE ESTIMATE OF CRYSTALLITE ORIENTATIONS AND SCATTERING CENTERS IN POLYCRYSTALS BY BACKSCATTERING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1686 - 1689

[8] DECHANNELING FROM 2-MEV HE+ DAMAGE IN GOLD [J]. PHYSICAL REVIEW B, 1973, 8 (03) : 1002 - 1010

[9] PRONKO PP, 1976, NUCL INSTRUM METHODS, V132, P249, DOI 10.1016/0029-554X(76)90742-4

[10] PRONKO PP, 1977, ION IMPLANTATION SEM

[1] BEHRISCH R, 1972, RADIAT EFF, V13, P33

[2] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] EISEN FH, 1973, CHANNELING, P415

[5] DEPTH PROFILES OF LATTICE DISORDER RESULTING FORM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3776 - &

[6] FOTI G, NUCL INSTRUM METH

[7] SEPARATE ESTIMATE OF CRYSTALLITE ORIENTATIONS AND SCATTERING CENTERS IN POLYCRYSTALS BY BACKSCATTERING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1686 - 1689

[8] DECHANNELING FROM 2-MEV HE+ DAMAGE IN GOLD [J]. PHYSICAL REVIEW B, 1973, 8 (03) : 1002 - 1010

[9] PRONKO PP, 1976, NUCL INSTRUM METHODS, V132, P249, DOI 10.1016/0029-554X(76)90742-4

[10] PRONKO PP, 1977, ION IMPLANTATION SEM