DOSE DEPENDENCE OF EPITAXIAL REGROWTH OF SE-IMPLANTED GAAS

被引：9

作者：

BHATTACHARYA, RS

PRONKO, PP

LING, SC

WILSON, SR

机构：

[1] WRIGHT STATE UNIV,DAYTON,OH 45435

[2] MOTOROLA INC,PHOENIX,AZ 85008

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.93157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：502 / 504

页数：3

共 8 条

[1]

BHATTACHARYA RS, 1982, J APPL PHYS, V53, P1803

[2] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

GAMO, K ;

INADA, T ;

MAYER, JW ;

EISEN, FH ;

RHODES, CG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :85-89

[3] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS [J].

GRIMALDI, MG ;

PAINE, BM ;

NICOLET, MA ;

SADANA, DK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4038-4046

[4] EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS [J].

GRIMALDI, MG ;

PAINE, BM ;

MAENPAA, M ;

NICOLET, MA ;

SADANA, DK .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :70-72

[5] ATTEMPT TO UNDERSTAND PREFERENTIAL SPUTTERING [J].

KELLY, R .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :553-558

[6] DIFFERENTIAL SPUTTERING AND SURFACE SEGREGATION - THE ROLE OF ENHANCED DIFFUSION [J].

SWARTZFAGER, DG ;

ZIEMECKI, SB ;

KELLEY, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :185-191

[7] APPLICATION OF AES TO STUDY OF SELECTIVE SPUTTERING OF THIN-FILMS [J].

VANOOSTROM, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :224-227

[8] LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHOUS GAAS [J].

WILLIAMS, JS ;

AUSTIN, MW .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :994-996

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