INTERDIFFUSION OF AL AND GA IN (AL,GA)AS/GAAS SUPERLATTICES

被引:34
作者
LEE, JC [1 ]
SCHLESINGER, TE [1 ]
KUECH, TF [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.583709
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1187 / 1190
页数:4
相关论文
共 8 条
  • [1] INTERDIFFUSION IN HGTE-CDTE SUPERLATTICES
    ARCH, DK
    FAURIE, JP
    STAUDENMANN, JL
    HIBBSBRENNER, M
    CHOW, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2101 - 2105
  • [2] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
    BASTARD, G
    [J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
  • [3] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION
    CAMRAS, MD
    HOLONYAK, N
    BURNHAM, RD
    STREIFER, W
    SCIFRES, DR
    PAOLI, TL
    LINDSTROM, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5637 - 5641
  • [4] INTERDIFFUSION BETWEEN GAAS AND ALAS
    CHANG, LL
    KOMA, A
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 138 - 141
  • [5] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES
    CIBERT, J
    PETROFF, PM
    WERDER, DJ
    PEARTON, SJ
    GOSSARD, AC
    ENGLISH, JH
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 223 - 225
  • [6] THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES
    KUECH, TF
    VEUHOFF, E
    KUAN, TS
    DELINE, V
    POTEMSKI, R
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 257 - 271
  • [7] DETERMINATION OF THE INTERDIFFUSION OF AL AND GA IN UNDOPED (AL,GA)AS/GAAS QUANTUM-WELLS
    SCHLESINGER, TE
    KUECH, T
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (09) : 519 - 521
  • [8] SCHLESINGER TE, 1986, IN PRESS DEC P MAT R