THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES

被引：120

作者：

KUECH, TF

VEUHOFF, E

KUAN, TS

DELINE, V

POTEMSKI, R

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(86)90310-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：257 / 271

页数：15

共 41 条

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