Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)

被引：96

作者：

García, JM ^{[1
]}

Silveira, JP ^{[1
]}

Briones, F ^{[1
]}

机构：

[1] CSIC, CNM, Inst Microelect Madrid, Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 03期

关键词：

D O I：

10.1063/1.126992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In segregation effects during InAs growth on GaAs(001) and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (similar to 50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs is pseudomorphically grown on GaAs. A picture of the growth process is discussed on the basis of the equilibrium between InAs and floating In dominated by the stress energy. (C) 2000 American Institute of Physics. [S0003-6951(00)05529-7].

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页码：409 / 411

页数：3

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