Intermixing and shape changes during the formation of InAs self-assembled quantum dots

被引：531

作者：

García, JM ^{[1
]}

MedeirosRibeiro, G ^{[1
]}

Schmidt, K ^{[1
]}

Ngo, T ^{[1
]}

Feng, JL ^{[1
]}

Lorke, A ^{[1
]}

Kotthaus, J ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA, QUEST, SANTA BARBARA, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 14期

关键词：

D O I：

10.1063/1.119772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects. (C) 1997 American Institute of Physics.

引用

页码：2014 / 2016

页数：3

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