Improvement of the electrical properties of Cu-poor CuInS2 thin films by sodium incorporation

被引：36

作者：

Watanabe, T ^{[1
]}

Nakazawa, H ^{[1
]}

Matsui, M ^{[1
]}

机构：

[1] Asahi Chem Ind Co Ltd, Cent Lab, Shizuoka 4160934, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 11B期

关键词：

sodium effect; conductivity; CuInS2; chalcopyrite; photoluminescence; defect; interstitial; solar cell;

D O I：

10.1143/JJAP.37.L1370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of intentional sodium incorporation on the electrical conductivity of Cu-poor CuInS2 thin films. CuInS2 films were fabricated by sulfurization of In-S/Cu/Na2S/In precursors. Sodium incorporation resulted in a remarkable increase in the lateral conductivity and the cell efficiency of CuInS2-based solar cells. Photoluminescence measurements revealed that the enhancements were attributed to the annihilation of donor states, most likely In interstitials, by sodium incorporation.

引用

页码：L1370 / L1372

页数：3

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