CuInS2 thin film growth monitoring by in situ electric conductivity measurements

被引:17
作者
Alt, M
Lewerenz, HJ
Scheer, R
机构
[1] Hahn-Meitner Institut, Abteilung Grenzflächen, 14109 Berlin
关键词
D O I
10.1063/1.364224
中图分类号
O59 [应用物理学];
学科分类号
摘要
The growth of CuInS2 thin films by coevaporation has been monitored by in situ electrical conductivity measurements. Films with different cation ratio In/(In+Cu) were investigated. During the controlled cool-down period we obtain conductivity versus temperature data which are completed ex situ in the low-temperature region. The formation of the semimetallic CuS phase in Cu-rich films is found during the cool-down period at a substrate temperature of about 450 K. For In-rich films the dominance of charged grain boundary states is discussed. (C) 1997 American Institute of Physics.
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页码:956 / 959
页数:4
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