Temperature-dependent localized excitations of doped carriers in superconducting diamond

被引:23
作者
Ishizaka, K. [1 ]
Eguchi, R. [1 ]
Tsuda, S. [2 ]
Chainani, A. [3 ]
Yokoya, T. [4 ]
Kiss, T. [1 ]
Shimojima, T. [1 ]
Togashi, T. [3 ]
Watanabe, S. [1 ]
Chen, C. -T. [5 ]
Takano, Y. [2 ]
Nagao, M. [2 ]
Sakaguchi, I. [2 ]
Takenouchi, T. [6 ]
Kawarada, H. [6 ]
Shin, S. [1 ,3 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[3] RIKEN, Inst Phys & Chem Res, Hyogo 6795143, Japan
[4] Okayama Univ, Grad Sch Nat Sci & Technol, Okayama 7008530, Japan
[5] Chinese Acad Sci, Beijing Ctr Crystal R&D, Beijing 100080, Peoples R China
[6] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
关键词
D O I
10.1103/PhysRevLett.100.166402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Laser-excited photoemission spectroscopy is used to show that the doped carriers in metallic or superconducting diamond couple strongly to the lattice via high-energy (similar to 150 meV) optical phonons, with direct observations of localized Franck-Condon multiphonon sidebands appearing as Fermi-edge replicas. It exhibits a temperature-dependent spectral weight transfer from higher to lower energy sidebands and zero-phonon Fermi-edge states. The quantified coupling strength shows a systematic increase on lowering temperature, implicating its relation to the normal state transport and superconductivity.
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页数:4
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