Reactivation of damaged rare earth luminescence centers in ion-implanted metal-oxide-silicon light emitting devices

Charge trapping and quenching of electroluminescence ( EL) in SiO2 layers implanted by Ge and rare earth ( RE) ions during hot electron injection were investigated. In case of the SiO2: Ge layer the EL quenching is caused by the transformation of the luminescent defects (equivalent to Ge- Si equivalent to or equivalent to Ge- Ge equivalent to) to optically inactive centers during hot electron excitation, whereas the EL from rare earth centers is quenched due to the electron trapping by RE-centers or their surroundings, but not due to their optical deactivation. Therefore, the flash lamp post-injection annealing releasing trapped electrons reactivates RE centers and increases the operating time of metal - oxide silicon light emitting devices (MOSLEDs).