Emission dynamics of In0.2Ga0.8As/GaAs lambda and 2 lambda microcavity lasers

被引：18

作者：

Michler, P ^{[1
]}

Hilpert, M ^{[1
]}

Ruhle, WW ^{[1
]}

Wolf, HD ^{[1
]}

Bernklau, D ^{[1
]}

Riechert, H ^{[1
]}

机构：

[1] SIEMENS AG,ZENT ABT FORSCH & ENTWICKLUNG,D-81739 MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.116132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the emission dynamics of two In0.2Ga0.8As/GaAs microcavity lasers after femtosecond optical excitation at 20 K. The pulse widths and the peak delays of lambda and a 2 lambda cavity are compared. Pulses as short as 3.3 ps (9.5 ps) and peak delays as short as 8.2 ps (16.5 ps) are obtained with the 2 lambda cavity (lambda cavity). The pulse widths and peak delays are well described by a model based on a rate equation analysis for carrier and photon densities; in particular, the better high speed characteristics of the 2 lambda cavity compared to the lambda cavity are well reproduced. (C) 1996 American Institute of Physics.

引用

页码：156 / 158

页数：3

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