Investigation for surface modification of polymer as an insulator layer of organic FET

被引：52

作者：

Uemura, S ^{[1
]}

Yoshida, M ^{[1
]}

Hoshino, S ^{[1
]}

Kodzasa, T ^{[1
]}

Kamata, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

来源：

THIN SOLID FILMS | 2003年 / 438卷

关键词：

electronic device; organic substance; polymers; dielectrics; insulator;

D O I：

10.1016/S0040-6090(03)00773-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated a double layer structured polymer gate dielectric for the organic field-effect transistor (FET) with the purpose of improving the performance of the polymer gate insulator. A polymer gate dielectric often causes a large hysteresis in the transfer characteristics of the organic FET. In this study, a water-soluble clay mineral layer was inserted between the PMMA and pentacene layer. It brought about improvement of the drain current and disappearance of the hysteresis. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：378 / 381

页数：4

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