Orientation control and electrical properties of sputtered Pb(Zr,Ti)O3 films

被引：31

作者：

Lee, JY

Lee, BS ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, Div Adv Mat Engn, Chonju 561756, South Korea

[2] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Dept Semicond Sci & Technol, Chonju 561756, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 79卷 / 01期

关键词：

Pb(Zr; Ti)O-3; sputtering; RTA; atomic mobility; hysteresis loop; C-E curve;

D O I：

10.1016/S0921-5107(00)00555-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Relationship between the crystallographic orientation and the electrical properties of the Pb(Zr,Ti)O-3. (PZT) thin films prepared by rf magnetron sputtering was investigated. The PZT films were deposited at 150. 250 or 340 degreesC and, followed by rapid thermal annealing (RTA). It was found that the crystallographic orientation of the PZT films could be controlled only by the deposition temperature and the ferroelectric properties were dependent upon the orientation of the films. It was suggested that the difference in the atomic mobility at the substrate surface during deposition was closely related to the film orientation. The films with (111) orientation showed relatively high capacitance and the remanant polarization values. (C) 2001 Elsevier Science S.A. All rights reserved.

引用

页码：86 / 89

页数：4

共 16 条

[1] DIELECTRIC-PROPERTIES OF (111)LEAD AND (100)LEAD ZIRCONATE-TITANATE FILMS PREPARED BY SOL-GEL TECHNIQUE
AOKI, K
FUKUDA, Y
NUMATA, K
NISHIMURA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5155 - 5158
[2] Brennan C. J., 1992, Integrated Ferroelectrics, V2, P73, DOI 10.1080/10584589208215733
[3] Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O-3 sol-gel derived thin films
Brooks, KG
Klissurska, RD
Moeckli, P
Setter, N
[J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (02) : 531 - 540
[4] CAMPMAN B, 1980, GLOW DISCHARGE PROCE, P201
[5] Structure control of Pb(Zr,Ti)O-3 films using PbTiO3 buffer layers produced by magnetron sputtering
Cattan, E
Velu, G
Jaber, B
Remiens, D
Thierry, B
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (13) : 1718 - 1720
[6] Chernov A.A., 1984, MODERN CRYSTALLOGRAP, VIII, P9
[7] GARDENIERS JGE, 1994, MATER RES SOC SYMP P, V343, P451, DOI 10.1557/PROC-343-451
[8] PREPARATION OF PB(ZR, TI)O-3 THIN-FILMS BY MULTITARGET SPUTTERING
HASE, T
HIRATA, K
AMANUMA, K
HOSOKAWA, N
MIYASAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5244 - 5248
[9] DEPOSITION OF EXTREMELY THIN (BA,SR)TIO3 THIN-FILMS FOR ULTRA-LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION
HWANG, CS
PARK, SO
CHO, HJ
KANG, CS
KANG, HK
LEE, SI
LEE, MY
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (19) : 2819 - 2821
[10] A study on the microstructure of preferred orientation of lead zirconate titanate (PZT) thin films
Kim, CJ
Yoon, DS
Lee, JS
Choi, CG
No, K
[J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (04) : 1043 - 1047

← 1 2 →