Preparation of CdTe coatings using the chemical deposition method

被引:42
作者
Sotelo-Lerma, M [1 ]
Zingaro, RA
Castillo, SJ
机构
[1] Texas A&M Univ, Dept Chem, College Stn, TX 77843 USA
[2] Univ Sonora, Dept Invest Polimeros & Mat, Hermosillo 83000, Sonora, Mexico
[3] Univ Sonora, Dept Fis, Hermosillo 83000, Sonora, Mexico
[4] Univ Sonora, DIFUS, Hermosillo 83000, Sonora, Mexico
关键词
cadmium telluride; rongalite; ion exchange; semiconductors;
D O I
10.1016/S0022-328X(00)00597-0
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
CdTe coatings have been prepared by the reaction between films of cadmium hydroxide deposited on glass and a solution prepared by the dissolution of tellurium in hydroxymethane sulfinic acid. The films of CdTe having thicknesses in the range of 1 mum have been deposited by immersing the cadmium hydroxide coatings in an alkaline solution containing a tellurium compound at 5 degreesC, which is warmed to 70 degreesC. Annealing at ca. 150 degreesC for 24 h gives highly crystalline, cubic CdTe. The preparation of an aqueous solution containing tellurium, which remains stable, is essential for the success of the process. Conditions for the preparation of such a solution are described. Details for the preparation of thin films of Cd(OH)(2) on glass, essential for the success of the process, are also described. The CdTe obtained was cubic, has a band gap energy of 1.51 eV, but does not display high photosensitivity. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:81 / 86
页数:6
相关论文
共 18 条
[1]  
[Anonymous], 1983, Thin Film Solar Cells P
[2]   THIN-FILM CDS/CDTE SOLAR-CELL WITH 15.8-PERCENT EFFICIENCY [J].
BRITT, J ;
FEREKIDES, C .
APPLIED PHYSICS LETTERS, 1993, 62 (22) :2851-2852
[3]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF 3 AQUEOUS-DEPOSITED FILMS - CDS, CDO, ZNO, FOR SEMICONDUCTOR AND PHOTO-VOLTAIC APPLICATIONS [J].
CALL, RL ;
JABER, NK ;
SESHAN, K ;
WHYTE, JR .
SOLAR ENERGY MATERIALS, 1980, 2 (03) :373-380
[4]  
Cullity B.D., 1967, Elements of X-Ray Diffraction
[5]   MODIFICATION OF CHEMICALLY DEPOSITED ZNSE THIN-FILMS BY ION-EXCHANGE REACTION WITH COPPER IONS IN SOLUTION [J].
ESTRADA, CA ;
ZINGARO, RA ;
MEYERS, EA ;
NAIR, PK ;
NAIR, MTS .
THIN SOLID FILMS, 1994, 247 (02) :208-212
[6]   Reaction of diisobutylaluminium hydride with selenium and tellurium: new reagents for the synthesis of seleno- and telluro-amides [J].
Li, GM ;
Zingaro, RA .
JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 1, 1998, (04) :647-650
[7]   Synthesis and structure of telluroamides and selenoamides. The first crystallographic study of telluroamides [J].
Li, GM ;
Zingaro, RA ;
Segi, M ;
Reibenspies, JH ;
Nakajima, T .
ORGANOMETALLICS, 1997, 16 (04) :756-762
[8]   CDSE THIN-FILMS - CHEMICAL-DEPOSITION USING N,N-DIMETHYLSELENOUREA AND ION-EXCHANGE REACTIONS TO MODIFY ELECTRICAL-CONDUCTIVITY [J].
NAIR, MTS ;
NAIR, PK ;
PATHIRANA, HMKK ;
ZINGARO, RA ;
MEYERS, EA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) :2987-2994
[9]   CONVERSION OF CHEMICALLY DEPOSITED PHOTOSENSITIVE CDS THIN-FILMS TO N-TYPE BY AIR ANNEALING AND ION-EXCHANGE REACTION [J].
NAIR, MTS ;
NAIR, PK ;
ZINGARO, RA ;
MEYERS, EA .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1557-1564
[10]  
*NBS, 1964, NBS MON, V3