Enhanced photoluminescence of InGaAs/GaAs quantum dots induced by nanoprobe pressure effects

被引：9

作者：

Ozasa, K

Aoyagi, Y

Yamane, A

Arai, Y

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[2] JST, CREST, Tokyo 1500002, Japan

[3] Saitama Univ, Dept Engn, Urawa, Saitama 3388570, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.1604464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Marked enhancement of photoluminescence of InGaAs/GaAs quantum dots (QDs) was observed by the nanoindentation of the light-collecting fiber nanoprobe onto the sample surface. In order to analyze its mechanism, calculations of the nanoprobe-induced strain and the energy-band profiles in the bulk GaAs surrounding InGaAs QDs have been performed on the bases of linear continuum elastic theory and six-band strain Hamiltonian. The calculations have revealed that the confinement potential for light holes was generated by the nanoprobe indentation. The results obtained in this study show that nanometer-scale strain modulation by nanoprobe indentation has potential for the investigation of semiconductor nanostructure physics. (C) 2003 American Institute of Physics.

引用

页码：2247 / 2249

页数：3

共 27 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].