High-power monolithic AlGaN/GaN HEMT oscillator

被引：34

作者：

Kaper, VS ^{[1
]}

Tilak, V

Kim, H

Vertiatchikh, AV

Thompson, RM

Prunty, TR

Eastman, LF

Shealy, JR

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Cornell Nanofabricat Facil, Ithaca, NY 14853 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 09期

关键词：

AlGaN/GaN HEMT; microwave FET oscillator; MMIC oscillator;

D O I：

10.1109/JSSC.2003.815934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic X-band oscillator based on an AlGaN/GaN high electron mobility transistor (HEMT) has been designed, fabricated, and characterized. A common-gate HEMT with 1.5 mm of gate width in conjunction with inductive feedback is used to generate negative resistance. A high Q resonator is implemented with a short-circuit low-loss coplanar waveguide transmission line. The oscillator delivers 1.7 W at 9.556 GHz into 50-Omega load when biased at V-ds = 30 V and V-gs = -5 V, with dc-to-RF efficiency of 16%. Phase noise was estimated to be -87 dBc/Hz at 100-kHz offset. Low-frequency noise, pushing and pulling figures, and time-domain characterization have been performed. Experimental results show great promise for AlGaN/GaN HEMT MMIC technology to be used in future high-power microwave source applications.

引用

页码：1457 / 1461

页数：5

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