A low phase noise X-band MMIC GaAs MESFET VCO

被引：12

作者：

Lee, CH ^{[1
]}

Han, S ^{[1
]}

Matinpour, B ^{[1
]}

Laskar, J ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Microelect Res Ctr, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 2000年 / 10卷 / 08期

关键词：

D O I：

10.1109/75.862229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a fully monolithic X-band VCO MMIC implemented in a commercial GaAs MESFET process. Measurement results demonstrate a single sideband phase noise of -91 dBc/Hz at a 100 KHz offset. This VCO achieves a maximum output power of 11.5 dBm with 12 dB of output power control and a 550 MHz of frequency tuning range. Second harmonic suppression of 20 dB or more is measured across the entire power and frequency range. These results are comparable to, or better than, the best reported results of VCO's implemented in high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) processes.

引用

页码：325 / 327

页数：3

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