High-efficiency Ku-band oscillators

被引：10

作者：

McSpadden, JO ^{[1
]}

Fan, L ^{[1
]}

Chang, K ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Elect Engn, College Stn, TX 77843 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 10期

关键词：

HEMT; high-efficiency transmitters; oscillators; pHEMT;

D O I：

10.1109/22.721166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ku-band oscillators have been experimentally found to have a high dc-to-radio-frequency (RF) efficiency. Using a packaged pseudomorphic high electron-mobility transistor (pHEMT) device, a maximum efficiency of 60% was measured at 14.5 and 15 GHz with output powers of 16 and 23 mW, respectively. Oscillator circuits also revealed efficiencies of 48% at 16 GHz and 41% at 17.1 GHz with RF output power levels of 11 and 13 mW, respectively.

引用

页码：1566 / 1571

页数：6

共 21 条

[1] A 5-GHz high-efficiency class-E oscillator [J].

Bryerton, EW ;

Shiroma, WA ;

Popovic, ZB .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1996, 6 (12) :441-443

[2] COMPUTER-AIDED-DESIGN OF NONLINEAR OPTIMUM OUTPUT POWER MESFET OSCILLATOR [J].

CHOO, EBL ;

STEWART, JAC ;

FUSCO, VF .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1988, 1 (08) :277-281

[3] HIGH-EFFICIENCY KA-BAND AND KU-BAND MESFET OSCILLATORS [J].

EVANS, DH .

ELECTRONICS LETTERS, 1985, 21 (06) :254-255

[4] AN ANALYTIC APPROACH TO OPTIMUM OSCILLATOR DESIGN USING S-PARAMETERS [J].

GILMORE, RJ ;

ROSENBAUM, FJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (08) :633-639

[5] LARGE-SIGNAL GAAS MESFET OSCILLATOR DESIGN [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (03) :217-227

[6]

KHANNA AS, 1985, MICROWAVES RF, V24, P81

[7]

KORMANYOS BK, 1995, IEEE MICROW GUIDED W, V5, P93

[8]

Kotzebue K. L., 1975, PROC IEEE INT S CIRC, P487

[9]

KRAUSS HL, 1980, SOLID STATE RADIO EN

[10]

KUSHNER LJ, 1990, MICROWAVE J, V33, P87

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