Photoelectron spectroscopy of individual nanowires of Si and Ge

被引：8

作者：

Haight, Richard ^{[1
]}

Sirinakis, George ^{[1
]}

Reuter, Mark ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2822415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe an experiment designed to carry out photoelectron spectroscopy on individual nanowires of Si and Ge. Laser generated, 150 fs pulses of 200 nm light (6.2 eV) were focused onto a single Si or Ge nanowire; the ensuing photoemitted electrons were measured with 20 meV resolution. Fermi level locations within the individual Si and Ge nanowire band gaps and work functions of hydrogen terminated nanowires were measured. Polarization dependent electron emission was observed and compared with Mie theory. (c) 2007 American Institute of Physics.

引用

页数：3

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