Optimization of the growth of Ga1-xMnxN epilayers using plasma-assisted MBE

被引：18

作者：

Kuroda, S

Bellet-Amalric, E

Biquard, X

Cibert, J

Giraud, R

Marcet, S

Mariette, H

机构：

[1] Univ Grenoble 1, CEA, CNRS Grp Nanophys & Semicond, Spectrometrie Phys Lab, F-38054 Grenoble 9, France

[2] CEA, DRFMC SP2M, F-38054 Grenoble 9, France

[3] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 240卷 / 02期

关键词：

D O I：

10.1002/pssb.200303367

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A systematic compositional and structural study of GaN: Mn epilayers grown by molecular beam epitaxy (MBE) was performed, with a special attention to the dependence on the growth conditions. The "growth diagram" related to the Ga/N flux ratio for GaN was modified by adding Mn flux. In particular, the stable Ga-bilayer coverage on the surface for the Ga-rich condition was reduced in the presence of Mn. The Mn incorporation in the epilayers was found to be strongly dependent on the Ga/N flux ratio. The X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS) measurements revealed a clear contrast between the precipitation of a perovskite compound GaMn3N at Mn compositions higher than 1.7%, and the single phase of the wurtzite Ga1-xMnxN at lower Mn compositions. The single-phase epilayers (x less than or equal to 1.7%) exhibited intrinsic ferromagnetic behaviors at room temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：443 / 446

页数：4

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