Local structure and valence state of Mn in Ga1-xMnxN epilayers

被引：24

作者：

Biquard, X

Proux, O

Cibert, J

Ferrand, D

Mariette, H

Giraud, R

Barbara, B

机构：

[1] CEA Grenoble, DRFMC, SP2M, F-38054 Grenoble 9, France

[2] CNRS, Cristallog Lab, F-38042 Grenoble, France

[3] CEA CNRS UJF Grenoble Grp Nanophys & Semicond, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

[4] Lab Magnetisme Louis Neel, F-38042 Grenoble 9, France

来源：

JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 01期

关键词：

EXAFS; XANES; Mn; GaN; magnetic semiconductor;

D O I：

10.1023/A:1023261407516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn has been incorporated in epilayers of the large-gap semiconductor GaN grown by molecular beam epitaxy using a nitrogen plasma cell. Detailed extended X-ray absorption fine structure (EXAFS) studies of a Ga0.98Mn0.02N epilayer confirm that the Mn atoms substitute the Ga atoms, with an increase by 2.7% of the distance to the nearest nitrogen atoms. Near-edge spectroscopy results tend to indicate that the valence state of Mn is slightly higher than 3+, while EXAFS analysis suggests an electron transfer to the N neighbors.

引用

页码：127 / 129

页数：3

共 6 条

[1] Mn K-edge XANES studies of La1-xAxMnO3 systems (A = Ca, Ba, Pb) -: art. no. 214405 [J].