Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN

被引：88

作者：

Soo, YL ^{[1
]}

Kioseoglou, G

Kim, S

Huang, S

Kao, YH

Kuwabara, S

Owa, S

Kondo, T

Munekata, H

机构：

[1] SUNY Buffalo, Dept Phys, Amherst, NY 14260 USA

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1423406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. %. A small fraction of the impurity atoms could also form Mn clusters. (C) 2001 American Institute of Physics.

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页码：3926 / 3928

页数：3

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