Direct extraction of HBT equivalent-circuit elements

被引：37

作者：

Rudolph, M ^{[1
]}

Doerner, R ^{[1
]}

Heymann, P ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1999年 / 47卷 / 01期

关键词：

analytical techniques; heterojunction bipolar transistor; parameter extraction;

D O I：

10.1109/22.740081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an analytical method for determining the heterojunction bipolar transistors (HBT's) equivalent-circuit elements. Its special feature is that it does not need measurements of test structures nor optimizations. The new algorithm for extracting the intrinsic elements exploits the information contained in the frequency dependence of the network parameters, This leads to a fast algorithm with a unique solution. The method is validated treating GaInP/GaAs HBT's.

引用

页码：82 / 84

页数：3

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