New phase and surface melting of Si(111) at high temperature above the (7 x 7)-(1 x 1) phase transition

被引：34

作者：

Fukaya, Y

Shigeta, Y

机构：

[1] Yokohama City Univ, Fac Sci, Kanazawa Ku, Yokohama, Kanagawa 2360027, Japan

[2] Yokohama City Univ, Grad Sch Integrated Sci, Kanazawa Ku, Yokohama, Kanagawa 2360027, Japan

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.85.5150

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The surface structure of Si(lll) at high temperatures (950-1380 degreesC) has been studied with reflection high-energy electron diffraction. We have found three different surface structures: (I) A relaxed bull;like structure with adatoms of 0.25 monolayer (ML) is formed (950-1210 degreesC); (2) there is a new phase where the adatom coverage decreases to 0.20 hit (1250-1270 degreesC); (3) the surface melting occurs over 1290 degreesC. The crystalline structure below the melting layer can be explained by the vacancy model missing all adatoms and 0.45 ML of atoms in the first-double layer.

引用

页码：5150 / 5153

页数：4

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